DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODESAYTAC S; SCHLACHETZKI A.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1135-1139; 4 P.; BIBL. 10 REF.Article

CALCUL DU PROFIL DE DIFFUSION DE LA COUCHE "CACHEE" DU TRANSISTORADAMCHUK VG; CHERNOV IV.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 56-61; BIBL. 6 REF.Article

COMPUTER CALCULATIONS OF IMPURITY PROFILES IN SILICON (II)NUYTS W; VAN OVERSTRAETEN R.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 455-472; ABS. ALLEM.; BIBL. 25 REF.Serial Issue

MEASUREMENT OF THE BASE DIFFUSION PROFILE OF A NARROW-BASEWIDTH TRANSISTOR.BOOTH RC.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 9; PP. 221-222; BIBL. 9 REF.Article

COMPUTER CALCULATIONS OF IMPURITY PROFILES IN SILICON(I)NUYTS W; VAN OVERSTRAETEN R.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 329-341; ABS. ALLEM.; BIBL. 12 REF.Serial Issue

DIFFUSION VON FREMDELEMENTEN IN MISCHKRISTALLEN. II. ZUR DIFFUSION VON ZINK UND MANGAN IN ALUMINIUM = DIFFUSION D'ELEMENTS D'ADDITION DANS LES SOLUTIONS SOLIDES D'ALUMINIUM. II. DIFFUSION DE ZN ET MN DANS ALBERGNER D; CYRENER E.1973; NEUE HUETTE; DTSCH.; DA. 1973; VOL. 18; NO 1; PP. 9-12; BIBL. 16 REF.Serial Issue

X-RAY EXAMINATION OF DIFFUSED FILMS.HOUSKA CR.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 451-464; BIBL. 15 REF.Article

MEASUREMENT OF THE SELF-DIFFUSION OF CADMIUM INTO CADMIUM SULPHIDE USING RADIOTRACER TECHNIQUESJONES ED.1972; J. PHYS. CHEM. SOLIDS.; G.B.; DA. 1972; VOL. 33; NO 11; PP. 2063-2069; BIBL. 15 REF.Serial Issue

ETUDE DE L'INFLUENCE DES CHAMPS DES CONTRAINTES ELASTIQUES SUR LA REDISTRIBUTION PAR DIFFUSION DES IMPURETES DANS LE SILICIUMPANTELEEV VA; GUGINA TS; LEONOV VN et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1977; VOL. 20; NO 6; PP. 124-127; BIBL. 6 REF.Article

DIFFUSION INTERACTIONS IN GLASSES ARISING FROM DISCONTINUITIES IN ANION CONCENTRATIONOKONGWU DA; LU WK; HAMIELEC AE et al.1973; J. CHEM. PHYS.; U.S.A.; DA. 1973; VOL. 58; NO 2; PP. 777-787; BIBL. 34 REF.Serial Issue

APPLICATION OF THE BACKSCATTERING METHOD FOR THE MEASUREMENT OF DIFFUSION OF ZINC IN ALUMINIUMFONTELL A; ARMINEN E; TURUNEN M et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 113-119; ABS. ALLEM.; BIBL. 22 REF.Serial Issue

EXAMINATION OF ERRORS IN THE DETERMINATION OF PHASE BOUNDARY THICKNESS BY SMALL-ANGLE X-RAY SCATTERINGRYONG JOON ROE.1982; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1982; VOL. 15; NO 2; PP. 182-189; BIBL. 22 REF.Article

CONCENTRATION PROFILES OF ION-IMPLANTED IONS IN SILICONNAMBA S; MASUDA K; GAMO K et al.1972; IN: ELECTRON ION BEAM SCI. TECHNOL. VTH INT. CONF.; PRINCETON; ELECTROCHEM. SOC.; DA. 1972; PP. 254-264; BIBL. 9 REF.Conference Proceedings

DIFFUSION MUTUELLE DE CHAINES POLYMERES COURTES DANS UN SYSTEME DE CHAINES LONGUESBROCHARD F; JOUFFROY J; LEVINSON P et al.1983; JOURNAL DE PHYSIQUE. LETTRES; ISSN 0302-072X; FRA; DA. 1983; VOL. 44; NO 12; PP. L455-L460; ABS. ENG; BIBL. 8 REF.Article

DIFFUSION KINETICS OF AU THROUGH PT FILMS ABOUT 2000 AND 6000 A THICK STUDIED WITH AUGER SPECTROSCOPYCHANG CC; QUINTANA G.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 3; PP. 265-273; BIBL. 17 REF.Article

TRANSPORT DE SE A PARTIR DE ASCL₃ DANS UNE COUCHE EPITAXIQUE DE GAASD'YACHKOVA NN; IVANYUTIN LA; MALININ A YU et al.1973; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1973; VOL. 9; NO 5; PP. 775-778; BIBL. 8 REF.Serial Issue

ELECTROLYTICAL DOPING OF SILICON WITH LITHIUMANTULA J.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2721-2722; BIBL. 6 REF.Article

TI DIFFUSION IN TI: LINBO₃ PLANAR AND CHANNEL OPTICAL WAVEGUIDESBURNS WK; KLEIN PH; WEST EJ et al.sdOPTICAL COMMUNICATION CONFERENCE. EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION. 5/1979/AMSTERDAM; NLD; DA. S.D.; PP. 21.1.1-21.1.4; BIBL. 4 REF.Conference Paper

STUDIES ON THE CHARACTERISTICS OF ALGINATE GELS IN RELATION TO THEIR USE IN SEPARATION AND IMMOBILIZATION APPLICATIONS = ETUDE DES CARACTERISTIQUES DES GELS D'ALGINATE POUR LEUR EMPLOI COMME MILIEU DE SEPARATION ET D'IMMOBILISATIONKIERSTAN M; DARCY G; REILLY J et al.1982; BIOTECHNOLOGY AND BIOENGINEERING; ISSN 0006-3592; USA; DA. 1982; VOL. 24; NO 7; PP. 1507-1517; BIBL. 5 REF.Article

ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS: THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTSHILDEBRAND O.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 575-584; ABS. GER; BIBL. 34 REF.Article

CARACTERISTIQUES DE LA REPARTITION DU LITHIUM DANS LA ZONE DE DIFFUSION DES STRUCTURES P-I-N DE SI(LI)MUMINOV RA; NIGMANOV O; YAFASOV A YA et al.1975; IZVEST. AKAD. NAUK UZ. S.S.R., FIZ.-MAT. NAUK; S.S.S.R.; DA. 1975; NO 6; PP. 44-48; ABS. OUZBEK; BIBL. 10 REF.Article

LOW-TEMPERATURE ZN- AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTODIODESANDO H; SUSA N; KANBE H et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1408-1413; BIBL. 18 REF.Article

DEPTH PROFILES OF INTERDIFFUSING SPECIES OF HYDRATED GLASSESTSONG IST; HOUSER CA; TONG SSC et al.1980; PHYS. CHEM. GLASSES; ISSN 0031-9090; GBR; DA. 1980; VOL. 21; NO 5; PP. 197-198; BIBL. 12 REF.Article

THE EFFECT OF EMITTER-PUSH ON THE BASE TRANSPORT CHARACTERISTICS OF PLANAR TRANSISTORSRIVASTAVA A.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. K149-K152; BIBL. 9 REF.Article

OXIDANT TRANSPORT DURING STEAM OXIDATION OF SILICONMIKKELSEN JC JR.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 11; PP. 903-905; BIBL. 13 REF.Article